Semiconductor laser device with a protective film on the facets

Details Semiconductor laser device with a protective film on the facets Semiconductor laser device with a protective film on the facets

1989-04-07

1990-08-21

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

049512919

ABSTRACT:
A semiconductor laser device with a protective film on the facets, wherein said protective film is made of a multi-layered dielectric film composed of alternate layers consisting of at least two kinds of dielectric film, one of which is a first dielectric film of low refractive index and the other of which is a dielectric film of high refractive index, said multi-layered dielectric film which covers at least one of the facets therewith being a light-permeable film with a reflectivity of 30% or less.

REFERENCES:
patent: 4092659 (1978-05-01), Ettenberg
patent: 4178564 (1979-12-01), Ladany et al.
8106 IEEE Jnal of Quantum Electronics, vol. QE-17 (1981), Sep., No. 9, New York, U.S.A., Donald Fye, "An Optimization Procedure for the Selection of Diode Laser Facet Coatings".
Ettenberg, "A New Dielectric Facet Reflector for Semiconductor Lasers", Applied Physics Letters, 32(11), Jun. 1, 1978, pp. 724-725.

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