Semiconductor laser

Details Semiconductor laser Semiconductor laser

1997-03-28

1999-11-30

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 43, H01S 319

Patent

active

059955287

ABSTRACT:
A semiconductor laser includes a first clad layer, a first optical waveguide layer, a first barrier layer, an active layer, a second barrier layer, a second optical waveguide layer and a second clad layer formed in this order on a GaAs substrate which is a III-V group compound semiconductor. Each of the layers contains As and P, each of the first and second clad layers and the first and second optical waveguide layers is of a composition which matches with the GaAs substrate in lattice. The active layer is of a composition which induces compression strain on the GaAs substrate, and each of the first and second barrier layers is of a composition which induces tensile strain on the GaAs substrate, thereby compensating for the compression strain induced in the active layer.

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