Semiconductor device having resistor structure

Details Semiconductor device having resistor structure Semiconductor device having resistor structure

1988-07-25

1990-08-21

Hille, Rolf

357 59, H01L 2702

Patent

active

049511181

ABSTRACT:
A resistor structure including a resistor element and a wiring layer connected to the resistor element is formed on an insulating layer such as a field silicon oxide layer on a major surface of a semiconductor substrate. The insulating layer includes a thin portion on which the resistor element is formed.

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IBM Technical Bulletin, vol. 21, No. 9, Feb. 1979, "Poly Si Gate FET with Self-Registering Metal Contacts to Both Poly Si and Diffused Silicon Regions", by Rideout.

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