Patent
1990-01-19
1990-08-21
James, Andrew J.
357 59, H01L 2712
Patent
active
049511165
ABSTRACT:
A semiconductor device of this invention such as a read-only memory has element areas on the substrate surface surrounded by a field SiO.sub.2 layer with its surface etched according to a pattern so that the type of the chip can be identified easily by visual inspection.
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Clark, K. G., "Automatic Mask Alignment in MOS/LSI Processing", Microelectronics, vol. 3, No. 9, pp. 47-55 (1970).
Ghandhi, VLSI Fabrication Principles, pp. 544-546, John Wiley, 1983.
Carr, W. N., et al., MOS/LSI Design and Application, McGraw-Hill, 1972, pp, 308-309.
Ishikura Suehiro
Kagawa Takayoshi
Crane Sara W.
James Andrew J.
Sharp Kabushiki Kaisha
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