Turn-off power semiconductor component

Details Turn-off power semiconductor component Turn-off power semiconductor component

1988-03-09

1990-08-21

Hille, Rolf

357 39, H01L 2974

Patent

active

049511092

ABSTRACT:
Conventional turnoff power semiconductor devices each comprise a p-n junction blocking in case of turnoff, one zone of which, lying at the p-n junction, has a high doping gradient. But this produces a low dynamic voltage stability characteristic for the power semiconductor device. To increase the dynamic voltage stability characteristic of the power semiconductor device, it is proposed to provide one zone in the form of a region having at least a width of twenty microns viewed from the p-n junction, wherein a maximum doping gradient dN.sub.2 /dx=5.times.10.sup.16 cm.sup.-4 and a predetermined basic dopant concentration is present.

REFERENCES:
patent: 4177478 (1979-12-01), Senes
patent: 4574296 (1986-03-01), Sueoka et al.
Patent Abstracts of Japan, vol. 5, No. 145, 9/81, No. 56-80163.
Fukui et al., "Two-Dimensional Numerical Analysis . . . ", 9/85, pp. 1830 to 1834.

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