Solid-state image pickup device

Patent

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Details

357 24, H01L 2714, H01L 3100

Patent

active

049511050

ABSTRACT:
A solid-state image pickup device, effectively preventing dark current, includes a photosensitive pixel section formed at the surface portion of a semiconductor layer of one conductivity type. Each pixel consists of an impurity layer of an opposite conductivity to generate signal carriers; an element isolation layer formed adjacent each photosensitive pixel to isolate the photosensitive pixels from each other; transfer electrodes for transferring the signal carriers; and a storage electrode formed at the upper portion of each photosensitive pixel and responsive to the application of a voltage to allow carriers of opposite polarity to that of the signal carriers, to be injected from the element isolation layer into the surface portion of each photosensitive pixel. The storage electrode has an opening at a portion corresponding to an optical path to which the light is incident.

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