Process for producing a semiconductor device using purified phos

Etching a substrate: processes – Nongaseous phase etching of substrate – Recycling – regenerating – or rejunevating etchant

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438904, 438953, 438745, 4233211, H01L 21302, C01B 25234

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active

059102578

ABSTRACT:
A process for the preparation of an analytical sample characterized by depositing and separating solely the impurity to be analyzed from phosphoric acid; a process for analysis of the impurity characterized by depositing and separating solely the impurity from phosphoric acid and applying the separated material to analysis; a process for preparation of high grade phosphoric acid characterized by depositing and separating solely the impurity from phosphoric acid to be purified; a process for the fabrication of a semiconductor device characterized by using phosphoric acid, the impurity content of which is not more than 10.sup.-3 Bq/mL, defined by the concentration of a contained radioactive element selected from the group consisting of Pb, Bi and Po, as a processing solution.

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