Structure to protect against below ground current injection

Details Structure to protect against below ground current injection Structure to protect against below ground current injection

1994-10-31

1996-02-27

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

257544, 257546, 257547, 257550, 257355, H01L 2900, H01L 2362

Patent

active

054951232

ABSTRACT:
An isolation structure is provided to give improved protection from below ground current injection. A first epitaxial region is provided between a power field effect device and nearby control circuitry. The first epitaxial region is tied to the substrate, and the ties are located between the first epitaxial region and the power field effect device. On the opposite side of the power device, preferably adjacent an edge of the integrated circuit chip, a second epitaxial region is formed. This epitaxial region is connected to the first epitaxial region, preferably by a metal interconnect line. A second set of substrate contacts is located between the power device and the second epitaxial region, and is tied to ground. The second epitaxial region encourages injection of current at a location spaced away from the control circuitry.

REFERENCES:
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patent: 4412142 (1983-10-01), Ragonese et al.
patent: 4458158 (1984-07-01), Mayrand
patent: 4819049 (1989-04-01), Johnston et al.
patent: 4879584 (1989-11-01), Takagi et al.
patent: 4890149 (1989-12-01), Bertotti et al.
patent: 5072278 (1991-12-01), Paparo et al.
patent: 5243214 (1993-09-01), Sin et al.

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