Magnetoresistive effect element and magnetoresistive effect sens

Details Magnetoresistive effect element and magnetoresistive effect sens Magnetoresistive effect element and magnetoresistive effect sens

1997-10-30

2000-02-08

Kiliman, Leszek

Stock material or miscellaneous articles

Composite

Of inorganic material

428694R, 428694TR, 428694T, 428694TS, 428694TM, 428900, 360113, 324252, G11B 566

Patent

active

060226331

ABSTRACT:
A magnetoresistive effect element having a lamination structure of a free magnetic layer, a non-magnetic layer in contact with the free magnetic layer, a pinned magnetic layer in contact with the non-magnetic layer, and an anti-ferromagnetic layer in contact with the pinned magnetic layer, wherein the product of a saturation magnetization of the pinned magnetic layer and a thickness of the pinned magnetic layer is not higher than 2.times.10.sup.-9 T.multidot.m. The pinned magnetic layer may include a lanthanide metal.

REFERENCES:
patent: 5206590 (1993-04-01), Dieny et al.
patent: 5301079 (1994-04-01), Cain et al.
patent: 5549978 (1996-08-01), Iwasaki
David A. Thompson, et al., "Thin Film Magnetoresistors in Memory, Storage, and Related Applications", pp. 1039-1050, IEEE Transactions on Magnetics, vol. Mag-11, No. 4, Jul. 1975.

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