Low dielectric constant insulation layer for integrated circuit

Details Low dielectric constant insulation layer for integrated circuit Low dielectric constant insulation layer for integrated circuit

1994-02-04

1996-02-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437238, 437240, 437195, 148DIG81, H01L 2102

Patent

active

054948592

ABSTRACT:
A low dielectric constant insulation layer for an integrated circuit structure material, and a method of making same. The low dielectric constant insulation layer comprises a porous insulation layer, preferably sandwiched between non-porous upper and lower insulation layers. The porous insulation layer is formed by depositing a composite layer comprising an insulation material or a material which can be converted to an insulation material, by a converting process and a material which can be converted to a gas upon subjection to the converting process. Release of the gas leaves behind a porous matrix of the insulation material which has a lower dielectric constant than the composite layer.

REFERENCES:
patent: 4028149 (1977-06-01), Deines et al.
patent: 4532700 (1985-08-01), Kinney et al.
patent: 4968384 (1990-11-01), Asano
patent: 5175130 (1992-12-01), Kondo et al.
patent: 5393712 (1995-02-01), Rostoker et al.

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