Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1994-12-13

1996-02-27

Fourson, George

Fishing, trapping, and vermin destroying

427 24, 427 26, 427 67, H01L 2176

Patent

active

054948460

ABSTRACT:
Oxygen ions are partially implanted into a semiconductor substrate 1 to form an oxygen ion implantation area. Then, a trench 2 surrounding the oxygen ion implantation area is formed in the semiconductor substrate 1 so as to remove the outer peripheral portion of the oxygen ion implantation area. Then, the semiconductor substrate 1 are heat treated to turn the oxygen ion implantation area into a buried oxide film 4 which is stable. Then, an insulating film 3 is buried into the trench 2.

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patent: 4800170 (1989-01-01), Jain et al.
patent: 4810667 (1989-03-01), Zorinsky et al.
patent: 4959329 (1990-09-01), Okamoto et al.
patent: 5376560 (1994-12-01), Aronowitz et al.
Study on Bi-CMOS . . . Technology, Reprint of Electronics Letter, Jul. 1989, 2 pages, S. Matsumoto et al.

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