Dual photo-resist process for fabricating high density DRAM

Details Dual photo-resist process for fabricating high density DRAM Dual photo-resist process for fabricating high density DRAM

1994-05-03

1996-02-27

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437919, 437229, H01L 218242

Patent

active

054948398

ABSTRACT:
A dual photo-resist process for fabricating capacitor plates of a DRAM is disclosed including the step of forming a capacitor on a semiconductor IC surface. A first plurality of photo-resist regions which are separated from each other by spaces are then formed on the capacitor plate layer. At least one second photo-resist region is then formed on the capacitor plate layer which partially fills a space between, and is adjacent to one of, two of the first photo-resist regions. The capacitor plate layer is then etched below the spaces between the first and second photo-resist regions to form a plurality of individual capacitor plates including one capacitor plate for each DRAM cell.

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patent: 5023203 (1991-06-01), Choi
patent: 5173437 (1992-12-01), Chi
patent: 5296410 (1994-03-01), Yang
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