Method of forming semiconductor-on-insulator electronic devices

Details Method of forming semiconductor-on-insulator electronic devices Method of forming semiconductor-on-insulator electronic devices

1994-09-27

1996-02-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 62, 437 90, H01L 218232

Patent

active

054948371

ABSTRACT:
A method of forming a semiconductor-on-insulator (SOI) electronic device includes the steps of etching a semiconductor substrate to form a plurality of adjacent trenches therein and then forming electrically insulating layers on bottoms of the trenches. Epitaxial lateral overgrowth (ELO) is then performed to grow respective monocrystalline semiconducting regions in the trenches. These semiconducting regions are preferably grown from a sidewall of each trench onto a respective insulating layer and fill each trench. Monocrystalline active regions of the electronic device are then formed in the semiconducting regions and also in the substrate, adjacent the trench sidewalls. For example, a monocrystalline trench isolated extrinsic base region of a bipolar junction transistor (BJT) can be formed in a semiconducting region in a respective trench, and a corresponding intrinsic base region and an intrinsic collector region can be formed in the substrate, adjacent the semiconducting region. Alternatively, trench isolated source and drain regions of a field effect transistor (FET) can be formed in one or more adjacent semiconducting regions and the corresponding channel region of the FET can be formed therebetween.

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