Process of producing heterojunction bipolar transistor with sili

Details Process of producing heterojunction bipolar transistor with sili Process of producing heterojunction bipolar transistor with sili

1995-06-02

1996-02-27

Fourson, George

Fishing, trapping, and vermin destroying

437 89, 437 90, 437106, 437128, 437 99, 437131, 148DIG10, 148DIG11, 148DIG68, 148DIG69, 148DIG72, 257197, 257198, 257591, 257592, 257593, H01L 21265

Patent

active

054948363

ABSTRACT:
The invention provides a heterojunction bipolar transistor which has a low reistance SiGe base and is high in current gain and cutoff frequency even at low temperatures near the liquid nitrogen temperature. The transistor fabrication process comprises forming an n-type collector layer on a silicon substrate and a dielectric film on the collector layer, forming a base electrode of p.sup.+ -type polysilicon having an opening on the dielectric film, isotropically etching the dielectric film on the collector layer by using the opening of the base electrode to form a window, forming an external base layer of p.sup.+ -type silicon on the collector layer exposed by the window, selectively etching the external base layer to form an aperture in a central region, forming a p-type SiGe intrinsic base layer in the aperture of the external base layer and then forming an n.sup.+ -type emitter on the intrinsic base layer.

REFERENCES:
patent: 4780427 (1988-10-01), Sakai et al.
patent: 4975381 (1990-12-01), Taka et al.
patent: 5140400 (1992-08-01), Morishita
patent: 5177583 (1993-01-01), Endo et al.
patent: 5232861 (1993-08-01), Miwa
patent: 5272095 (1993-12-01), Enquist et al.
patent: 5296391 (1994-03-01), Sato et al.
patent: 5321301 (1994-06-01), Sato et al.
patent: 5346840 (1994-09-01), Fujioka
patent: 5389803 (1995-02-01), Mohammad
patent: 5391503 (1995-02-01), Miwa et al.
patent: 5399511 (1995-03-01), Taka et al.
patent: 5424227 (1995-06-01), Dietrich et al.
patent: 5424228 (1995-06-01), Imai
patent: 5432104 (1995-07-01), Sato
"Epitaxial-Base Double-Poly Self-Aligned Bipolar Transistors," by E. Ganin et al., IEEE IEDM Technical Digest, 1990, pp. 603-606.
"Low Temperature Operation of Si and SiGe Bipolar Transistors," by E. F. Crabbe et al., IEEE IEDM Technical Digest, 1990, pp. 17-20.
"SiGe-Base Heterojunction Bipolar Transistors: Physics and Design Issues," by G. L. Patton et al., IEEE IEDM Technical Digest, 1990, pp. 13-16.
"A `Self-Aligned` Selective MBE Technology for High-Performance Bipolar Transistors," by F. Sato et al., IEEE IEDM Technical Digest, 1990, pp. 607-610.

Affiliated with

Also associated with

Rating

Process of producing heterojunction bipolar transistor with sili does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process of producing heterojunction bipolar transistor with sili, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of producing heterojunction bipolar transistor with sili will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1678713