Coating apparatus – Gas or vapor deposition
Patent
1996-06-17
2000-02-08
Breneman, Bruce
Coating apparatus
Gas or vapor deposition
118725, 118730, C23C 1400, C23C 1600
Patent
active
060224134
ABSTRACT:
A thin-film vapor deposition apparatus has a reaction chamber for holding therein a substrate in an atmosphere isolated from an ambient atmosphere. For depositing a thin film on the substrate, the temperature of an inner wall of the reaction chamber is adjusted to control the temperature of the atmosphere in the reaction chamber, and the temperature of the substrate is also adjusted independently of the temperature of the atmosphere in the reaction chamber, while the substrate is being rotated at a high speed in the reaction chamber. Reactant gases required to deposit a thin film on the substrate are ejected from a reactant gas elector head toward the substrate in the reaction chamber. Remaining and excessive gases are discharged out of the reaction chamber.
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Journal of Crystal Growth, Feb. 1994, Netherlands, vol. 135, No. 3-4, ISSN 0022-0248, pp. 383-400, XP000484431, Anderson P.L. ET Al: "A high-speed, rotating-disc metalorganic chemical vapor deposition system for the growth of (Hg,Cd) Te and related alloys"*the whole document*.
U.S. application No. 08/662,763, filed Jun. 10, 1996, entitled "Reactant Gas Ejector Head and Thin-Film Vapor Deposition Apparatus", by Takeshi Murakami et al.
Fukunaga Yukio
Murakami Takeshi
Shinozaki Hiroyuki
Tsukamoto Kiwamu
Breneman Bruce
Ebara Corporation
Powell Alva C
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