MOS Bandgap reference

Details MOS Bandgap reference MOS Bandgap reference

1979-04-30

1981-09-01

Dixon, Harold A.

Electrical transmission or interconnection systems

Personnel safety or limit control features

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307297, 307304, 330256, H01L 3100

Patent

active

042874394

ABSTRACT:
A bandgap voltage reference source is provided which is temperature stable or temperature controlled and can be made by standard CMOS process. The reference has two substrate bipolar transistors with the emitter current density of one of the transistors being larger than the emitter current density of the other transistor. The transistors are used as emitter followers having resistors in their emitter circuits from which an error voltage is obtained. The error voltage is amplified through a differential or operational amplifier. Through the amplifier or through a resistor network, an output voltage higher or lower, respectively, than the bandgap voltage can be obtained. The output voltage can be made to have a positive, negative, or zero temperature coefficient.

REFERENCES:
patent: 4071813 (1978-01-01), Dobkin
patent: 4158804 (1979-06-01), Butler
"Analysis and Design of Integrated Circuits" by Gray & Meyer, (Wiley & Son Publisher), pp. 254-261.

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