Method and apparatus testing IC chips for damage during fabricat

Details Method and apparatus testing IC chips for damage during fabricat Method and apparatus testing IC chips for damage during fabricat

1997-04-24

1999-11-30

Nguyen, Vinh P.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324750, G01R 3128

Patent

active

059949112

ABSTRACT:
An approach using two terminal current measurements, preferably in a cyclic current-voltage sweeping procedure, and specialized test structure, is shown to be very useful in detecting processing induced changes in poly-Si/ultra-thin SiO.sub.2 /substrate Si structures. The charging current structure discernible in this approach is seen to have different features depending on processing history of the device. This is shown for the specific case of plasma gate definition etching with or without annealing.

REFERENCES:
patent: 3636450 (1972-01-01), Griffin
patent: 5053699 (1991-10-01), Aton
patent: 5659244 (1997-08-01), Sakaguchi
patent: 5804980 (1998-09-01), Nikawa
Uwasawa et al; "Scaling Limitation of Gate Oxide in P+ Polysilicon Gate MOS Structures For Sub Quarter Micron CMOS Device"; 1993 IEEE; pp. 895-898, unavailable month.

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