Semiconductor photoelectric conversion device with partly crysta

Details Semiconductor photoelectric conversion device with partly crysta Semiconductor photoelectric conversion device with partly crysta

1985-04-22

1987-11-03

James, Andrew J.

357 58, 357 2, 357 59, H01L 2714

Patent

active

047046244

ABSTRACT:
A semiconductor photoelectric conversion device comprises a first non-single crystal semiconductor layer of a first conductivity type. A second non-single crystal semiconductor layer of substantially an intrinsic conductivity type is formed on the first semiconductor layer; the second layer comprises a first crystallized region and a second crystallized region. The second crystallized region has a similar crystalline structure as that of the first semiconductor layer and extends from the first semiconductor layer toward the first crystallized region where the degree of crystallization of the first crystallized region is less than that of the second crystallized region. A third non-single crystal semiconductor layer of a second semiconductor type opposite to said first conductivity type is formed on the intrinsic layer.

REFERENCES:
patent: 3978333 (1976-08-01), Crisman et al.
patent: 4539431 (1985-09-01), Moddel et al.
patent: 4591892 (1986-05-01), Yamazaki
patent: 4591893 (1986-05-01), Yamazaki
patent: 4620058 (1986-10-01), Winterling et al.
Gutfeld, "Crystallization of silicon for Solar Cell Applications," IBM Technical Disclosure Bulletin, vol. 19, No. 10, Mar., 1977, pp. 3955-3956.
Chu et al., "Thin Film Polycrystalline Solar Cells," Thirteenth IEEE Photovoltaic Specialists Conference-1978, Washington, D.C., (Jun. 5-8, 1978), pp. 1106-1110.

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