Semiconductor memory in which data readout operation is carried

Details Semiconductor memory in which data readout operation is carried Semiconductor memory in which data readout operation is carried

1988-03-02

1989-03-07

Hecker, Stuart N.

Static information storage and retrieval

Floating gate

Particular biasing

365189, 365233, 365204, 307578, G11C 1140

Patent

active

048112925

ABSTRACT:
A programmable read-only memory is disclosed in which each of the memory cells is composed of a field effect transistor having a floating gate. The memory is equipped with a word line pull-up circuit which includes a pulse generator generating a pulse signal in response to a change in address signals and a capacitor coupled between the output terminal of the pulse generator and a selected word line, thereby the selected word line taking a level larger than a power supply voltage.

REFERENCES:
patent: 4094012 (1978-06-01), Perlegos et al.
patent: 4503522 (1985-03-01), Etoh et al.
patent: 4511811 (1985-04-01), Gupta

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