Process for producing an insulating layer buried in a semiconduc

Details Process for producing an insulating layer buried in a semiconduc Process for producing an insulating layer buried in a semiconduc

1986-08-20

1987-11-03

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

156662, 427 96, 4273762, 437240, B05D 306

Patent

active

047043024

ABSTRACT:
Process for producing a buried insulating layer in a semiconductor substrate by ion implantation.
This process consists of producing a mask on the substrate regions where the active zones are located, carrying out oxygen or nitrogen ion implantation in the substrate through the mask for the direct forming in the exposed area, and forming by lateral dispersion and diffusion into the substrate of implanted ions beneath the mask, a continuous oxide or nitride insulating layer which is buried in the substrate and optionally annealing the implanted substrate for reinforcing the continuity of the insulating layer by lateral diffusion of the implanted ions.

REFERENCES:
patent: 4361600 (1982-11-01), Brown
patent: 4412868 (1983-11-01), Brown et al.
IBM Technical Disclosure Bulletin, vol. 26, No. 2, Jul. 1983.
Patent Abstracts of Japan, vol. 5, No. 1-3, E-71, 25.8.1981.
IEEE Transactions of Electron Devices, vol. ED-30, No. 11, Nov. 1983.

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