Monolithic pin diode and method for its manufacture

Details Monolithic pin diode and method for its manufacture Monolithic pin diode and method for its manufacture

1988-02-02

1989-03-07

Sikes, William L.

357 56, 357 68, H01L 2912

Patent

active

048110809

ABSTRACT:
A monolithic semiconductor device that provides a diode having PIN diode characteristics. The diode has anode and cathode mesas having contacts in substantially the same plane to facilitate automatic bonding. One of the contacts is insulated from its associated mesa and has a conductive layer that extends between the mesas and through an insulating layer to make direct contact with the substrate, thereby isolating the flow of current from any intervening I regions. The conductive layer may include a portion of narrow cross section, to function as a fuse.

REFERENCES:
patent: 4301429 (1981-11-01), Goldman
patent: 4518981 (1985-05-01), Schlupp

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