Method of manufacturing analog semiconductor device

Details Method of manufacturing analog semiconductor device Method of manufacturing analog semiconductor device

1997-12-23

1999-11-30

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

438694, H01L 2100

Patent

active

059942231

ABSTRACT:
The present invention to provide a method of manufacturing an analog semiconductor device capable of minimizing the CD variation of a gate and improving the integration of a semiconductor device. First, a semiconductor substrate in which isolation films are formed is provided. A gate insulating layer, a first conductive layer, a dielectric layer and a second conductive layer are then formed on the substrate in sequence. Next, a first photoresist pattern is formed on the predetermined portion of the second conductive layer. The second conductive layer and the dielectric layer are then patterned using the first pattern as an etch mask, to form a first pattern for gate electrode on the substrate between the isolation films and form a second pattern for a lower capacitor electrode on the predetermined portion of the isolation film. Next, the first photoresist pattern is removed and a second photoresist pattern for an upper capacitor electrode is then formed on the second pattern. The second conductive layer of the first and second patterns and the exposed first conductive layer at both sides of the first and second patterns are etched using the dielectric layer, the gate insulating layer and the isolation films as an etch stopper and then the second photoresist pattern is removed.

REFERENCES:
patent: 5173437 (1992-12-01), Chi
patent: 5330883 (1994-07-01), Garza
patent: 5354706 (1994-10-01), Patrick
patent: 5358903 (1994-10-01), Kim
patent: 5773199 (1998-06-01), Linliu et al.

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