FET switch circuit having small insertion loss and exhibiting st

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307575, 307584, 307241, 307243, 307244, 307362, 307364, H03K 17687, H03K 1756, H03K 5153

Patent

active

048109118

ABSTRACT:
Disclosed is a switch circuit comprising one common input/output terminal, two switching input/output terminals, series field effect transistors respectively inserted between the common input/output terminal and the two switching input/output terminals, shunt field effect transistors respectively inserted between the two switching input/output terminals and the ground, and resistors respectively inserted between the ground and the common input/output terminal and between the ground and the two switching input/output terminals, the resistors having the resistance values smaller than that of the shunt field effect transistors at OFF state.

REFERENCES:
patent: 3280386 (1986-10-01), Philips
patent: 3360788 (1967-12-01), Casale et al.
patent: 3393382 (1968-07-01), Myers
patent: 4204131 (1980-05-01), Dozier
patent: 4719374 (1988-01-01), Bialo
Y. Tajima, W. Titus, R. Mozzi, A. Morris, "Broadband GaAs FET 2.times.1 Switches", GaAs Symposium Technical Digest, Oct. 23-25, 1984, pp. 81-84.

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