Phase shift mask and its manufacturing method and semiconductor

Details Phase shift mask and its manufacturing method and semiconductor Phase shift mask and its manufacturing method and semiconductor

1997-03-25

1999-11-30

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430323, G03F 900

Patent

active

059940018

ABSTRACT:
In order to manufacture a phase shift mask for producing a dark line pattern for semiconductor manufacturing, an opaque thin film pattern for forming a dark line is formed at a part of the boundary domain between a phase shift domain and a non-phase shift domain of a quartz substrate. Further, at a boundary portion of the phase shit domain where no opaque thin film pattern is formed, a transition portion is formed in which the etching depth stepwise chances up to 2.sup.n different depths by applying etching n times to the portion by different etching patterns at different etching depths. A phase shift mask for producing an open fine line in semiconductor manufacturing is efficiently manufactured with fewer etching steps.

REFERENCES:
patent: 5672450 (1997-09-01), Rolfson
Kim, Sung-Gi, et al, "Application of alternating phase shift mask to device fabrication," Proceeding of SPIE, vol. 2440, pp. 515-523, Feb. 1995.

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