Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

1988-07-06

1989-03-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437231, 156643, 156662, H01L 21465, H01L 21471

Patent

active

048106690

ABSTRACT:
In a method of fabricating a semiconductor device, a trench is formed on a semiconductor substrate on which a circuit element or electrode conductor is formed, and is filled with polysilicon, a planarizing material is applied with polyvinyl alcohol (PVA) aqueous solution onto the polysilicon to form a PVA film, and the entire surface of the semiconductor substrate is dry-etched with etching conditions that makes the ratio of the etching rate of the PVA film and the polysilicon film to be within the range of 1:1 to 1:2.

REFERENCES:
patent: 4038110 (1977-07-01), Feng
patent: 4046595 (1977-09-01), Ohkubo et al.
patent: 4359512 (1982-11-01), Fukuda et al.
patent: 4627988 (1986-12-01), Spanjer
patent: 4741926 (1988-05-01), White et al.
patent: 4764483 (1988-08-01), Fuse et al.

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