Method of fabricating a Si/SiC amorphous heterojunction photo tr

Details Method of fabricating a Si/SiC amorphous heterojunction photo tr Method of fabricating a Si/SiC amorphous heterojunction photo tr

1987-09-16

1989-03-07

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

357 30, 437 3, H01L 3118

Patent

active

048106623

ABSTRACT:
A heterojunction amorphous SiC/S.sub.i phototransistor with the structure of Al
.sup.+ a-SiC/i a-SiC/p.sup.+ a-SiC/i a-Si
.sup.+ a-SiC is provided. This new device has a very thin a-SiC base (100.ANG.) and a-SiC emitter, which provides an effective barrier to accumulate more photo generated holes at the base and therefore improves the gain significantly. An optical gain of 40 was obtained at an incident power of 5 .mu.w. This device has very promising applications as a flat panel display transistor, a phototransistor in photosensing element/array, and photo coupler to replace the p-i-n photodiode.

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