Semiconductor laser

Details Semiconductor laser Semiconductor laser

1985-01-16

1987-07-07

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 48, H01S 319

Patent

active

046792007

ABSTRACT:
A semiconductor laser includes a current blocking layer formed on a substrate, a first cladding layer formed on the current blocking layer, an active layer formed on the first cladding layer, and a second cladding layer formed on the active layer. An indent is formed in the current blocking layer near the center of the laser element, and a V-shaped groove is formed in the current blocking layer across the indent. A gain guide structure is formed where the indent is formed, and an index guide structure is formed near the cleaved facet. A stable transverse mode laser emission is ensured without the influence of the return beam reflected from the disc surface, and the attendant mode competition noise is reduced.

REFERENCES:
patent: 4594718 (1986-06-01), Seifres et al.

Affiliated with

Also associated with

Rating

Semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1666982