Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1980-10-03
1983-06-14
Larkins, William D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307565, 357 48, 357 68, H01L 2704, H01L 2948
Patent
active
043886329
ABSTRACT:
A simple silicon integrated circuit consists of two identical Schottky diodes formed in epitaxial pockets that are defined by P-N junction isolation walls. Metallization is provided to connect the diodes back-to-back in parallel and to provide terminal pads at the two nodes of the parallel circuit. Another metal film makes contact with the isolation wall and has an enlarged termination pad portion. This component may be connected across the input of an A/D converter to limit input signals to a small value.
REFERENCES:
patent: 3436667 (1969-04-01), Kedson
patent: 3679989 (1972-07-01), Thibodeau
patent: 3742250 (1973-06-01), Kan
patent: 4281448 (1981-08-01), Barry et al.
Hamilton and Howard, Basic Integrated Circuit Engineering, (McGraw-Hill, NY, 1975), p. 24.
Hibberd, Integrated Circuits (McGraw-Hill, NY, copyright 1969 by Texas Instruments) p. 43.
Larkins William D.
Sprague Electric Company
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