Semiconductor laser including groove having variable dimensions

Coherent light generators – Particular active media – Semiconductor

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372 44, H01S 318

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active

055419500

ABSTRACT:
A semiconductor laser including a semiconductor substrate of a first conductivity type; a semiconductor multilayer structure disposed on the substrate and including a first cladding layer of the first conductivity type, an active layer, a second cladding layer of a second conductivity type, opposite the first conductivity type, and a current blocking layer of the first conductivity type; a laser light emitting facet; a stripe-shaped V groove extending in a resonator length direction transverse to the laser light emitting facet and penetrating in a depth direction into a part of the semiconductor multilayer structure, including into the second cladding layer, the stripe-shaped V groove having a width transverse to the resonator length direction and the depth direction wherein at least one of the depth and width of the stripe-shaped V groove has a first dimension adjacent the laser light emitting facet and a second dimension, different from the first dimension, within the semiconductor laser spaced from the laser light emitting facet; and a semiconductor layer of the second conductivity type disposed in and filling the stripe-shaped V groove.

REFERENCES:
patent: 4791635 (1988-12-01), Schairer et al.
patent: 5023199 (1991-06-01), Murakami et al.
patent: 5185755 (1993-02-01), Mori et al.
patent: 5336635 (1994-09-01), Anayama et al.
Sasaki et al, "Highly Reliable 150 mW CW Operation Of Single-Stripe AlGaAs Lasers With Window Grown On Facets", Japanese Journal of Applied Physics, vol. 30, No. 5B, May 1991, pp. L-906-L-906.
"Laser Diode Technology and Application III", SPIE--The International Society for Optical Engineering, Jan. 1991, pp. 363-371.
Daniel Renner, "Laser Diode Technology and Applications IV", SPIE--The International Society for Optical Engineering, vol. 1634, Jan. 1992, pp. 319-328.

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