Coherent light generators – Particular active media – Semiconductor
Patent
1995-01-30
1996-07-30
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
H01S 319
Patent
active
055419496
ABSTRACT:
A diode laser (2) including multiple quantum wells (26) of AlGaInAs in either compressive or tensile strain and barrier layers (28), wherein the conduction band confines the electron preferably to at least 150 meV, or at least 135 meV, such that the diode laser is efficient and can operate for extended periods at elevated temperatures up to 85.degree. C. and above.
REFERENCES:
patent: 5381434 (1995-01-01), Bhat et al.
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Bhat et al., "OMCVD growth of strained Al.sub.x Ga.sub.y In.sub.1-x-y As for low threshold 1.3 .mu.m and 1.55 .mu.m quantum well lasers," Proceedings of the Fourth International Conference on Indium Phosphide and Related Materials, Apr. 21-24, 1992, Newport, Rhode Island, paper THD2, pp. 453-456.
Kasukawa et al., "Very low threshold current density 1.5 .mu.m GaInAs/AlGaInAs graded-index separate-confinement-heterostructure strained quantum well laser diodes grown by organometallic vapor deposition." Applied Physics Letters, vol. 59, pp. 2486-2488, 1991 (Nov.).
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Mondry et al., "Low threshold current density 1.5 .mu.m (In, Ga, Al)As quantum well lasers grown by MBE." Electronics Letters, vol. 28, pp. 1471-1472, 1992 (Jul.).
Tsang et al., "New current injection 1.5-.mu.m wavelength Ga.sub.x Al.sub.y In.sub.1-x-y As/InP double-heterostructure laser grown by molecular beam epitaxy," Applied Physics Letters, vol. 42, pp. 922-924, 1983 (Jun.).
Zah et al., "Low threshold 1.3 .mu.m strained-layer Al.sub.x Ga.sub.y In.sub.1-x-y As quantum well lasers," Electronics Letters. vol. 28, pp. 2323-2325, 1992 (Dec.).
Choi et al., "MBE-grown InGaAlAs 1.5 .mu.m MQW ridge waveguide laser diodes with AlAs etch stop layers," Electronics Letters, vol. 29, pp. 483-485, 1993 (Mar.).
Bhat Rajaram
Zah Chung-en
Bell Communications Research Inc.
Davie James W.
Falk James W.
Suchyta Leonard C.
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