Solid state image sensor having an anti-blooming isolation elect

Details Solid state image sensor having an anti-blooming isolation elect Solid state image sensor having an anti-blooming isolation elect

1986-02-11

1987-07-07

Rubinson, Gene Z.

Facsimile and static presentation processing

Facsimile

Recording apparatus

357 30, 35821311, H04N 314

Patent

active

046790896

ABSTRACT:
An image sensor includes a layer of photosensitive amorphous silicon on one surface of which is a large area common electrode and on the opposite surface of which are an array of spaced discrete electrodes and an isolation electrode which intends in the spaces between the discrete electrodes but is spaced therefrom. In operation, the common electrode is maintained at a first d-c potential, the isolation electrode is maintained at a different second d-c potential and the discrete electrodes are switched in turn to the second potential and the current flowing therethrough is used.

REFERENCES:
patent: 4236168 (1980-11-01), Herbst
patent: 4242700 (1980-12-01), Weimer
patent: 4477835 (1984-10-01), Berger et al.
patent: 4570076 (1986-02-01), Hamano et al.

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