Semiconductor laser device having a resonator of a particular le

Details Semiconductor laser device having a resonator of a particular le Semiconductor laser device having a resonator of a particular le

1996-04-09

1997-08-12

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

056573375

ABSTRACT:
A semiconductor laser device includes a substrate and a laminated structure formed on a top face of the substrate. The laminated structure includes (a) first and second guide layers and (b) a quantum well structure of compound semiconductor interposed between the first and second guide layers. The quantum well structure serves as a resonator of the device and includes at least one quantum well layer and at least one barrier layer. The quantum well layer has a thickness L.sub.z and the barrier layer has the energy gap larger than the energy gap of the quantum well layer so as to form a energy difference V.sub.0 between the bottom of the conduction band of the quantum well layer and the bottom of the conduction band of the barrier layer. The relationship represented by formula (I) is satisfied:

REFERENCES:
patent: 5173912 (1992-12-01), Iwase et al.
patent: 5175739 (1992-12-01), Takeuchi et al.
patent: 5260959 (1993-11-01), Hayakawa et al.
patent: 5282218 (1994-01-01), Okajima et al.
patent: 5287377 (1994-02-01), Fukuzawa et al.
patent: 5363392 (1994-11-01), Kasukawa et al.
patent: 5375135 (1994-12-01), Okumura et al.
patent: 5381434 (1995-01-01), Bhat et al.
patent: 5506856 (1996-04-01), Okumura et al.
Matsumoto et al., "Low threshold current, high quantum efficiency 1.5.mu.m GalnAs-GalnAsP GRIN-SCH single quantum well laser diodes" IEEE Journal of Quantum Electronics (Jun. 1991) 27(6):1790-1793.
Tanbun-Ek et al., "Very low threshold InGaAs/InGAAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy" Applied Physics Letters (Nov. 1989) 55(22):2283-2285.
Ishiguro et al., "InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor detection" Applied Physics Letters (Jun. 1988) 52(25):2099-2101.
Zhu et al., "Optical gain in GaAs/GaAIAs graded index separate-confinement single-quantum-well heterostructures" IEEE Journal of Quantum Electronics (Jun. 1989) 25(6):1171-1178.
Kasukawa et al., "Effect of well No. 1.3.mu.m GalnAsP graded-index separate-confinement-heterostructure multiple-quantum-well (GRIN-SCH-MQW) laser diodes" The Transactions of the IEICE (Jan. 1990) E73(1):59-62.
Mito et al., "High power quantum well lasers for fiber amplifier excitation" Proceedings of the Fourth International Conference on Indium Phosphide and Related Materials, Newport, Rhode Island, USA (Apr. 21-24, 1992) pp. 465-468.
McIlroy et al., "Analysis and amplification of theoretical gain curves to the design of multi-quantum-well lasers" IEEE Journal of Quantum Electronics (Dec. 1985) QE-21(12):1958-1963.

Affiliated with

Also associated with

Rating

Semiconductor laser device having a resonator of a particular le does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device having a resonator of a particular le, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device having a resonator of a particular le will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-166519