Semiconductor device having turn-on and turn-off capabilities

Details Semiconductor device having turn-on and turn-off capabilities Semiconductor device having turn-on and turn-off capabilities

1987-04-09

1989-03-28

Clawson, Jr., Joseph E.

357 234, 357 39, 357 43, 357 86, H01L 2974

Patent

active

048168920

ABSTRACT:
A semiconductor device comprises four regions of alternating conductivity type and comprises a plurality of turn-on cells at one of its major surfaces and a plurality of turn-off cells at another of its major surfaces. Both the turn-on and turn-off cells are of the conductor-insulator-semiconductor type. In an embodiment, the cell repeat distance for both turn-on cells and turn-off cells is preferably less than about the minimum thickness of the region of the semiconductor device that supports most of the device voltage. This enables the semiconductor device to operate efficiently in a field-effect transistor mode, in addition to a thyristor mode.

REFERENCES:
patent: 4170020 (1979-10-01), Sueoka et al.
S. Sun et al., "Modeling On-Resistance . . . Trans.", IEEE Trans. On Elec. Dev., vol. ED-27, No. 2, Feb. 1980, pp. 356-367.
R. Love et al., "Large Area Power Mosfet . . . ", Proc, IEDM, 1981, Dec. 1981, pp. 418-420.
J. Plummer et al., "I-G Planar Thyrs:I & II", IEEE Trans. On Elec. Dev., vol. ED-27, #2, Feb. 1980, pp. 380-393.

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