Optoelectronic device

Details Optoelectronic device Optoelectronic device

1986-10-06

1989-03-28

Sikes, WIlliam L.

357 13, 357 16, H01L 2714, H01L 3100

Patent

active

048168904

ABSTRACT:
An avalanche photodiode including a substrate, a first semiconductor region of a first conductivity type having a relatively large band gap, a second semiconductor region of a second conductivity type having a relatively large band gap, and a third semiconductor region of the first conductivity type having a band gap smaller than the band gap of the first and second semiconductor regions, is disclosed in which, in order to suppress an increase in dark current and to cause the avalanche photodiode to operate on a low voltage, a fourth semiconductor region equal in conductivity type to and larger in impurity concentration than the first semiconductor region is formed in the first semiconductor region at a position below a central portion of a pn junction formed between the first semiconductor region and the second semiconductor region. The avalanche photodiode formed with this structure has low-noise and low operation voltage characteristics.

REFERENCES:
Donnelly et al., "Planar Guarded Avalanche Diodes in InP Fabricated by Ion Implantation", Appl. Phys. Lett. 35(1), Jul. 1, 1979, pp. 74-76.

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