Method of preparing a thin-film, single-crystal photovoltaic det

Details Method of preparing a thin-film, single-crystal photovoltaic det Method of preparing a thin-film, single-crystal photovoltaic det

1979-02-28

1982-01-26

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

136255, 136256, 136264, 29576E, 29591, 148175, 148188, 357 4, 357 15, 357 30, 357 61, H01L 21363, H01L 2714

Patent

active

043121144

ABSTRACT:
A thin-film single-crystal infrared detector exhibiting an increased frequency of response. A closed transverse junction, formed by diffusing a central electrode of an impurity rich metal into a lead-salt film epitaxially grown on an insulating substrate, provides an effective optical area in excess of the junction surface. An ohmic contact is spaced apart from the central electrode. Junction capacitance, a limitation upon the electrical response, is diminished by the detector geometry while detectivity is enhanced. In an alternative embodiment the detector may be segmented to provide directional detection.

REFERENCES:
patent: 3013232 (1961-12-01), Lubin
patent: 3433677 (1969-03-01), Robinson
patent: 3515757 (1970-06-01), Kitagawa
patent: 3728591 (1973-04-01), Sunshine
patent: 3767984 (1973-10-01), Shinoda et al.
patent: 3779801 (1973-12-01), Halloway
patent: 3961998 (1976-06-01), Scharnhorst et al.
patent: 4057476 (1977-11-01), Krikorian et al.
patent: 4062698 (1977-12-01), Blakeslee et al.
patent: 4080723 (1978-03-01), Holloway
patent: 4086555 (1978-04-01), Krikorian et al.
Jensen et al., "Surface Charge Transport . . . PbSnTe Epitaxial Films", J. ac. Sci. Tech., vol. 13, No. 4, Jul./Aug. 1976, pp. 920-925.
Holloway et al., "Low-Capacitance PbTe Photodiodes", Applied Physics Letters, vol. 30, No. 4, Feb. 15, 1977, pp. 210-212.
Hohnke et al., "Thin-film (Pb,Sn)Te Photodiodes . . . ", Applied Physics Letters, vol. 29, No. 2, Jul. 15, 1976, pp. 98-100.
Holloway et al., "Epitaxial Growth of Lead Tin Telluride", J. Applied Physics, vol. 41, No. 8, Jul. 1970, pp. 3543-3545.
Nill et al., Applied Phys. Lett., May 15, 1970, vol. 16, No. 10, pp. 375-377.

Affiliated with

Also associated with

Rating

Method of preparing a thin-film, single-crystal photovoltaic det does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of preparing a thin-film, single-crystal photovoltaic det, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of preparing a thin-film, single-crystal photovoltaic det will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1661603