Semiconductor device containing electrostatic capacitive element

Details Semiconductor device containing electrostatic capacitive element Semiconductor device containing electrostatic capacitive element

1995-06-07

1996-07-30

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257758, 257306, H01L 2348, H01L 2352

Patent

active

055414540

ABSTRACT:
A semiconductor device comprises a capacitor consisting of an Al region formed on a semiconductor substrate, an Al oxide film formed on a surface of said Al region, and electrodes opposed to said Al region with interposition of said Al oxide film.

REFERENCES:
patent: 4115795 (1978-09-01), Masuoka et al.
patent: 4169270 (1979-09-01), Hayes
patent: 4352239 (1982-10-01), Pierce
patent: 4460911 (1984-07-01), Salters
patent: 4481283 (1984-11-01), Kerr et al.
patent: 4686554 (1987-08-01), Ohmi et al.
patent: 4791469 (1988-12-01), Ohmi et al.
patent: 4811076 (1989-03-01), Tigelaar et al.
patent: 4899206 (1990-02-01), Sakurai et al.
patent: 4916512 (1990-04-01), Ohmi et al.
S. M. Sze, Semiconductor Devices Physics and Technology John Wiley & Sons (New York) 1985 pp. 372-373.
T. F. Deutsch et al., "Laser Photo deposition of metal films with microscopic flatomer", Applied Physics Letters vol. 35 (25 Jul. 1979) pp. 175-177.
Patent Abstracts of Japan, vol. 13, No. 578 (E-864) (3926) Dec. 20, 1989 & JP-A-1 241 857 (Toshiba) Sep. 26, 1989.
Patent Abstracts of Japan, vol. 13, No. 166 (E-764) Apr. 20, 1989 & JP-A-64 000 756 (Hitachi, Ltd.) Jan. 5, 1989.
Tsubouchi et al., "Complete Planarization of Via Holes With Aluminum by Selective and Nonselective Chemical Vapor Deposition." Appl. Phys. Letter 57 Sep. 1990 P.1221 P.1223.
Masu et al., "Selective Deposition of Aluminum from Selectively Excited Metalorganic Source by the RF Plasma." Appl. Phys. Lett. 56 Apr. 1990 p. 1543, p. 1545.
Sekiguchi et al., "Epitaxial Growth of Al (100) on Si (100) by Gas-Temperature-Controlled Chemical Vapor Deposition." JJAP, 1989 p. 29, p. 31.

Affiliated with

Also associated with

Rating

Semiconductor device containing electrostatic capacitive element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device containing electrostatic capacitive element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device containing electrostatic capacitive element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1661414