Use of pnictide films for wave-guiding in opto-electronic device

Details Use of pnictide films for wave-guiding in opto-electronic device Use of pnictide films for wave-guiding in opto-electronic device

1985-01-28

1987-07-07

Wise, Robert E.

350 9634, 357 30, 357 61, G02B 610

Patent

active

046782664

ABSTRACT:
The semiconductor layer of an opto-electronic device has one or more films of a pnictide rich material deposited thereon. The pnictide has a smaller reflective index than the semiconductor layer. These films provide a wave-guiding effect to light within the semiconductor layer in opto-electronic devices, such as solid state lasers and light emitting diodes and wave guides interconnecting such devices.

REFERENCES:
patent: 3958263 (1976-05-01), Panish et al.
patent: 4509066 (1985-04-01), Schachter et al.
"Comprehensive Inorganic Chemistry", Pergamon Press, p. 547.
S. M. Sze, "Physics of Semiconductor Devices", published by John Wiley and Sons, pp. 711, 198.
Y. Hirota and T. Kobayashi, "Chemical Vapor Deposition and Characterization of Phosphorous-Nitride (P.sub.3 N.sub.5) Gate Insulators for I.sub.n P Metal-Insulator-Semiconductor Devices", J. Appl. Phys. 53(7), Jul. 1982, pp. 5037-5043.

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