Method of forming improved contacts from polysilicon to silicon

Details Method of forming improved contacts from polysilicon to silicon Method of forming improved contacts from polysilicon to silicon

1994-10-27

1996-07-30

Thomas, Tom

Fishing, trapping, and vermin destroying

437191, 148DIG38, 148DIG123, H01L 21225, H01L 2128

Patent

active

055411371

ABSTRACT:
The method of the present invention introduces a method of forming conductively doped contacts on a supporting substrate in a semiconductor device that minimizes the lateral out-diffusion of the conductive dopants and also provides for a low resistive contact by the steps of: preparing a conductive area to accept contact formation; forming a phosphorus insitu doped polysilicon layer over the conductive area; forming an arsenic insitu doped polysilicon layer over the phosphorus insitu doped polysilicon layer, wherein the two insitu doped polysilicon layers are deposited one after another in separate deposition steps; and annealing the layers at a temperature range of approximately 900.degree.-1100.degree. C. thereby, resulting in sufficient thermal treatment to allow phosphorus atoms to break up a first interfacial silicon dioxide layer formed between the conductive area and the phosphorus insitu doped polysilicon layer.

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S. Wolf & R. N. Tauber "Silicon Processing for the VLSI Era" 1986 pp. 290-291, vol. 1.

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