Method of forming a field oxide film in a semiconductor device

Details Method of forming a field oxide film in a semiconductor device Method of forming a field oxide film in a semiconductor device

1995-07-06

1996-07-30

Dang, Trung

Fishing, trapping, and vermin destroying

437 89, 437 90, 437 70, 437 72, 437 73, 437 67, H01L 2176

Patent

active

055411363

ABSTRACT:
The present invention discloses a method of forming a field oxide film of a semiconductor device which can minimize a bird's beak by etching a predetermined portion of a silicon substrate, forming a field oxide film and forming a single crystal silicon layer on the etched silicon substrate.

REFERENCES:
patent: 4566914 (1986-01-01), Hall
patent: 4597164 (1986-07-01), Havemann
patent: 5100830 (1992-03-01), Morita
patent: 5236863 (1993-08-01), Iranmanesh

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