Fishing – trapping – and vermin destroying
Patent
1994-11-08
1996-07-30
Wilczewski, Mary
Fishing, trapping, and vermin destroying
437 53, H01L 2170, H01L 2700
Patent
active
055411339
ABSTRACT:
Method of manufacturing a semiconductor device and semiconductor device manufactured by such a method.
A method of manufacturing a semiconductor device whereby a surface of a semiconductor body 1 is covered with an electrically insulating layer 8 and at least two electrical conductors 20, 23 are provided on the insulating layer next to one another and mutually separated by an interposed dielectric layer 21. The conductor 20 is formed from a first conductive layer deposited on the insulating layer. The upper surface and at least the flank 25 of the conductor 20 facing the other conductor are covered with the dielectric layer 21. Then a second conductive layer 22 is deposited over the entire surface which exhibits a step corresponding to the flank 25 of the first conductor. Subsequently, a mask 24 is formed which defines the second conductor, after which the second conductor 23 is formed from the second conductive layer through etching. According to the invention, the mask 24 is so aligned relative to the first conductor 20 that the edge of the mask facing towards the flank 25 is situated above the dielectric layer on the flank of the first conductor. The layer 22 is etched isotropically, which etching is continued so long after the second conductive layer 22 has been entirely removed from above the first conductor that said step in the second conductive layer has been removed at least partly owing to underetching below the mask. The invention may advantageously be used for the manufacture of a charge coupled device in which the electrodes do not overlap one another.
REFERENCES:
patent: 4396460 (1983-08-01), Tamaki et al.
patent: 4625391 (1986-12-01), Sasaki
patent: 4766089 (1988-08-01), Davids et al.
Biren Steven R.
Dutton Brian K.
U.S. Philips Corporation
Wilczewski Mary
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