Method of making non-volatile memory device

Details Method of making non-volatile memory device Method of making non-volatile memory device

1994-08-15

1996-07-30

Fourson, George

Fishing, trapping, and vermin destroying

437978, 437238, 437241, H01L 218247

Patent

active

055411290

ABSTRACT:
A semiconductor memory device such as an EEPROM having an insulation layer with a dielectric constant greater than that of SiO.sub.2 formed beneath a floating gate on or below a tunnel oxide layer where the passage of electrons is enabled by means of tunnel effect in order to increase the dielectric breakdown voltage of the tunnel oxide layer. The semiconductor memory device is made by a method in which, for example, a thin Si.sub.3 N.sub.4 layer is formed on a thin SiO.sub.2 tunnel oxide layer or a substrate, and the layered structure is patterned to leave only a tunnel part. Then a SiO.sub.2 gate insulation layer is formed over the substrate and the tunnel part, followed by formation of a floating gate on the SiO.sub.2 gate insulation layer and diffusion of impurities into the floating gate. The Si.sub.3 N.sub.4 portion of the tunnel part prevents diffused impurities from reaching the SiO.sub.2 tunnel oxide of the tunnel part or the substrate. Further, patterning of the tunnel part before formation of the SiO.sub.2 gate insulation layer avoids contamination of the SiO.sub.2 gate insulation layer. Thus, the dielectric breakdown voltage of the SiO.sub.2 tunnel oxide of the tunnel part and the SiO.sub.2 gate insulation layer is increased.

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