Reduced resistance base contact method for single polysilicon bi

Details Reduced resistance base contact method for single polysilicon bi Reduced resistance base contact method for single polysilicon bi

1995-01-30

1996-07-30

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437162, 437164, 437909, 148DIG10, H01L 21265

Patent

active

055411215

ABSTRACT:
A bipolar transistor (100) and a method for forming the same. A diffusion source dielectric layer (118) is deposited over a semiconductor body (101). An emitter window (116) is then etched through the diffusion source dielectric layer (118). An extrinsic base region (110) is diffused from the diffusion source dielectric layer (118). The intrinsic base region (108) is then implanted. Base-emitter spacers (120) are then formed followed by the emitter electrode (124) and emitter region (126). The extrinsic base region (110) is self-aligned to the emitter eliminating the alignment tolerances for the lateral diffusion of the extrinsic base implant and an extrinsic base implant.

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