Manufacturing method of active circuit elements integrated type

Details Manufacturing method of active circuit elements integrated type Manufacturing method of active circuit elements integrated type

1994-07-07

1996-07-30

Fourson, George

Fishing, trapping, and vermin destroying

437937, H01L 21266

Patent

active

055411193

ABSTRACT:
The trap-state density of a switching transistor of a picture element is reduced by selectively treating only the switching transistor of the picture element part of a liquid display with the plasma hydrogenation treatment, the laser annealing treatment or both thereof. That is, aluminum is sputtered before making an aperture for a contact hole of a thin layer transistor, then a mask aluminum is formed on the active circuit element forming region by patterning only aluminum on the picture element forming region. Then, the plasma hydrogenation treatment is made, and the mask aluminum film is removed by the etching. Following the similar process thereafter, an active circuit integrated liquid crystal display is fabricated. Thereby, the leakage current of the switching transistor of the picture element part can be reduced and decrease of pressure tolerance of transistors constituting the active circuit element and the depletion can be prevented.

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