Charge accumulation and multiplication photodetector

Details Charge accumulation and multiplication photodetector Charge accumulation and multiplication photodetector

1988-04-15

1990-03-27

Sikes, William L.

357 30, H01L 2978

Patent

active

049125362

ABSTRACT:
A charge accumulation and multiplication photodetector has a unit cell composed of three gates formed on a substrate. The first gate serves as a photodetector and charge integrator. The second gate serves as a transfer control gate and the third gate serves as an avalanche multiplication gate. In operation the transfer gate is closed and in response to a photon flux charge is accumulated in the first gate. After an integration time period to collect charge, the avalanche gate is biased into an avalanche ready state and the charge transfer gate is then enabled allowing for a rapid transfer of the integrated charge from the accumulator gate to the avalanche gate. The displacement current of avalanche induced charge across the avalanche gate is utilized as signal output of the device. Gain is achieved in the device in avalanching the charge in the avalanche gate and by transferring the charge across the transfer gate in a time period substantially less than integration time period to yield a current gain in the transfer process.

REFERENCES:
patent: 4701773 (1987-10-01), Kaneda et al.

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