Circuit responsive to a voltage change for detecting erroneous w

Details Circuit responsive to a voltage change for detecting erroneous w Circuit responsive to a voltage change for detecting erroneous w

1990-02-27

1991-05-14

Popek, Joseph A.

Static information storage and retrieval

Powering

365195, 3072965, 323316, G11C 700, G11C 1100, G05F 316

Patent

active

050162225

ABSTRACT:
A circuit for detecting a power supply voltage in a memory apparatus comprises a first circuit, through which flows a first saturating current which is constant when a power supply voltage is above a predetermined value, and a second circuit, through which flows a second current which increases in proportion to the power supply voltage when it is above the predetermined value. The first circuit includes an N-channel enhancement mode insulated gate field effect transistor ("NE-IGFET"), and the second circuit includes an N-channel depletion mode insulated gate field effect transistor ("ND-IGFET"). A power supply voltage is thus detected by responsive to a difference between the threshold values of the NE-IFGET and ND-IFGET, which is not dependent on a temperature.

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