Semiconductor memory device

Static information storage and retrieval – Magnetic bubbles – Guide structure

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357 31, 357 32, 357 34, 365 34, H01L 2972, H01L 2714, H01L 3100, H01L 3114

Patent

active

050160753

ABSTRACT:
A semiconductor memory device is constructed of a lateral bipolar transistor as a load element. The base region of the lateral bipolar transistor has an impurity concentration which is increased from the upper surface of the base region in the depth direction of the base region.

REFERENCES:
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patent: 4257059 (1981-03-01), Herndon
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patent: 4826780 (1989-05-01), Takemoto et al.
patent: 4914629 (1990-04-01), Blake et al.
Bhattacharyya et al., "Dual Base Lateral Bipolar Transistor", Sept. 1977 of IBM, 357 *35.

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