Make-link programming of semiconductor devices using laser-enhan

Details Make-link programming of semiconductor devices using laser-enhan Make-link programming of semiconductor devices using laser-enhan

1988-03-07

1990-03-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437174, 437 19, 437922, 148DIG59, H01L 21265

Patent

active

049120662

ABSTRACT:
A semiconductor device is programmed by a laser beam which causes an insulator between two conductors on a silicon substrate to be permanently altered, as by breakdown of the insulator. The conductors may be metals such as aluminum or tungsten, and the insulator is a layer of deposited or thermal silicon oxide. The breakdown may be enhanced by voltage applied between the conductors while the laser beam is focused on the structure.

REFERENCES:
patent: 4617723 (1986-10-01), Mukai
patent: 4636404 (1987-01-01), Raffel et al.
patent: 4665295 (1987-05-01), McDavid

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