Method of eliminating bird's beaks when forming field oxide with

Details Method of eliminating bird's beaks when forming field oxide with Method of eliminating bird's beaks when forming field oxide with

1988-05-20

1990-03-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 70, 437239, H01L 2176

Patent

active

049120620

ABSTRACT:
A method of selectively forming a field oxide in a semiconductor device is provided by implanting a dopant into selected regions of a semiconductor substrate. A high concentration of dopant provides for an enhanced oxide growth rate. Another dopant may be implanted if necessary to provide a high field threshold voltage to prevent inversion. Annealing the semiconductor substrate and growing the oxide at a predetermined temperature will keep the high concentration of dopant in the semiconductor substrate, and thus maintain a state of enhanced oxide growth throughout the oxidation cycle. By taking advantage of enhanced oxidation, a mask, such as silicon nitride, is not required to prevent the substantial growth of oxide in the undoped region or active area.

REFERENCES:
patent: 4170492 (1979-10-01), Bartlett et al.
patent: 4372033 (1983-02-01), Chiao
patent: 4522657 (1985-06-01), Rohatgi et al.
patent: 4570325 (1986-02-01), Higuchi
patent: 4597164 (1986-07-01), Havemann
patent: 4717687 (1988-01-01), Verma

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