Method of manufacturing optical semiconductor device

Details Method of manufacturing optical semiconductor device Method of manufacturing optical semiconductor device

1998-09-29

2000-03-14

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117954, 117955, 438 31, 438 29, 438 22, 438 84, 438 46, C30B 2592

Patent

active

060367717

ABSTRACT:
In a method of manufacturing an optical semiconductor device having a semiconductor substrate, an optical waveguide formed by a semiconductor layer is formed on the semiconductor substrate by the use of the selective metal-organic vapor phase epitaxy including source materials. The source materials are intermittently supplied in the selective metal-organic vapor phase epitaxy.

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