Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-02-20
1998-07-21
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257347, 349 42, 349139, H01L 2904
Patent
active
057838429
ABSTRACT:
In a semiconductor device in which a passive element and an active element are formed on a substrate in which a thin film semiconductor layer is formed on an insulating layer or an insulating substrate, the device has a concave portion in at least a part of a portion below a wiring connecting the passive element or the active element.
REFERENCES:
patent: 4770498 (1988-09-01), Aoki et al.
patent: 4869576 (1989-09-01), Aoki et al.
patent: 5111260 (1992-05-01), Malhi et al.
patent: 5153702 (1992-10-01), Aoyama et al.
patent: 5245452 (1993-09-01), Nakamura et al.
patent: 5341028 (1994-08-01), Yamaguchi et al.
patent: 5378919 (1995-01-01), Ochiai
Patent Abstracts of Japan, vol. 13, No. 57 (P-825), Feb. 9, 1989, & JP-A-63 246 728 (Ricoh), Oct. 13, 1988, Toru.
Patent Abstracts of Japan. vol. 15, No. 262 (P-1222), Jul. 3, 1991, & JP-A-03 085 530 (Sharp), Apr. 10, 1991, Makoto et. al.
Patent Abstracts of Japan, vol. 17, No. 122 (P-1501), Mar. 15, 1993, & JP-A-04 305 625 (Sony), Oct. 28, 1992, Takuo.
Kohchi Tetsunobu
Miyawaki Mamoru
Canon Kabushiki Kaisha
Tran Minh-Loan
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